Text
Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes
The recombination rates are measured and analyzed for red-emitting InGaN light-emitting diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN multiple quantum well (MQWs) are grown with x≥0.28 in the InxGa 1−xN quantum well. The AlyGa 1−yN interlayers (ILs) with high Al-content ( y> 0.8) are employed because they result in smoother surfaces with smaller V-pits and higher photoluminescence efficiency. The IL-MQWs are formed on GaN and InzGa 1−zN /GaN superlattice (SL) underlayers (ULs) with z=0.015 , 0.025, and 0.065. Differences in B coefficients (radiative recombination) within this set result from changes in wavefunction overlap caused by differences in layer thickness and composition in the IL-MQW. IL-MQWs grown on SL-ULs have A coefficients (Shockley-Reed-Hall recombination) that are lower than expected, indicating that the SL-ULs help reduce defect formation. Compared to shorter wavelength InGaN-based LEDs, the B coefficients are ∼ 100 times lower due to lower wavefunction overlap. A and C coefficients are higher because of a higher number of defects.
Barcode | Tipe Koleksi | Nomor Panggil | Lokasi | Status | |
---|---|---|---|---|---|
art146244 | null | Artikel | Gdg9-Lt3 | Tersedia namun tidak untuk dipinjamkan - No Loan |
Tidak tersedia versi lain