Digital alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 , random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 , and random alloy Al 0.79 In 0.21 As 0.74 Sb 0.26 are promising candidates for the multiplication regio…
We report AlInAsSb separate absorption, charge, and multiplication (SACM) avalanche photodiodes with a >3- μm optical cutoff, operating at 240 K. Gain and dark current performance further improve …
Digital alloy and random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes (APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a promising multiplicatio…
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength…
We report high-gain, low-noise-figure, and high linearity analog photonic links at 1064 nm using InP/InGaAs modified uni-traveling-carrier (MUTC) photodiodes. Balanced photodiodes reach output powe…
Back-illuminated flip-chip-bonded InP/InGaAs modified uni-traveling-carrier photodiodes working at 1064 nm wavelength are demonstrated. The RF output powers of photodiodes with diameters of 10 μm …
A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is demonstrated. The breakdown voltage increases ~4.2 mV/°C, bandwidth reduces ~0.09%/°C, and gain-bandwidth produ…