Geiger-mode InGaAsP/InP single photon avalanche photodiode (SPAD) with a low dark count rate (DCR) of 870 Hz at a photon detection efficiency (PDE) of 20% at 1064 nm is achieved for a 40 micron dia…
Ex-situ rapid thermal treatments of 1–2.5 μm extended wavelength In 0.83 Ga 0.17 As/In 0.83 Al 0.17 As photodetector epiwafers on InP substrate were investigated. Enhanced photoluminescence inte…
The dark current and the photo response characteristics of extended wavelength In 0.83 Ga 0.17 As/InP photodetectors (PDs) with n-In 0.83 Ga 0.17 As absorber doped to 8×10 15 , 7×10 16 and 1×10 …
By incorporating of a combined mesa cleaning of SF 6 plasma bombarding and HCl rinsing prior to the SiN x passivation, an ultra-low dark current density of 9.1 nA/cm 2 at 180 K under a reverse bias…
Dark current behaviors of the 2.6 gm cutoff wavelength In0,83Ga 0,17 As photodetectors are investigated as a function of the mesa etching depth. The total dark current monotonically declines from 2…