We report the growth of direct bandgap single-crystalline Ge 1-x Sn x thin films on unheated substrates by a modified magnetron sputtering system. The Ge 1-x Sn x thin films were deposited on Si, G…
We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb) and thin quaternary layers (AlInAsSb) …
Midwave infrared (3-5 μm) photodetector with high detecting performance at room temperature has always been pursued for wide applications such as remote sensing, medical diagnosis, communication, …
A novel refractometer based on multimode fiber (MMF) embedded single mode-no core-single mode (ME-SNS) fiber structure is presented and investigated in detail. The ME-SNS structure has a higher ref…
We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of p…
A novel multifunctional polarization converter (PC) based on the solid-state plasma (SSP) is proposed, which can switch two functions and adjust the working band. By energizing different parts of S…