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Seong, Jun Kang. ().
New gate CD control technology using CF4 plasma treatment following HBr/02 Plasma treatment step in gate etch process using organic BARC .
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Gaya Chicago
Seong, Jun Kang.
New gate CD control technology using CF4 plasma treatment following HBr/02 Plasma treatment step in gate etch process using organic BARC.
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Gaya MLA
Seong, Jun Kang.
New gate CD control technology using CF4 plasma treatment following HBr/02 Plasma treatment step in gate etch process using organic BARC.
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Text.
Gaya Turabian
Seong, Jun Kang.
New gate CD control technology using CF4 plasma treatment following HBr/02 Plasma treatment step in gate etch process using organic BARC.
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