Gaya APA
Gallagher, James C., Jacobs, Alan G., Foster, Geoffrey M., Koehler, Andrew D., Anderson, Travis J., Kub, Francis J., Hobart, Karl D., Hite, Jennifer K., Feigelson, Boris N., Mastro, Michael A.. ().
Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation .
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Gaya Chicago
Gallagher, James C., Jacobs, Alan G., Foster, Geoffrey M., Koehler, Andrew D., Anderson, Travis J., Kub, Francis J., Hobart, Karl D., Hite, Jennifer K., Feigelson, Boris N., Mastro, Michael A..
Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.
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,
.
Text.
Gaya MLA
Gallagher, James C., Jacobs, Alan G., Foster, Geoffrey M., Koehler, Andrew D., Anderson, Travis J., Kub, Francis J., Hobart, Karl D., Hite, Jennifer K., Feigelson, Boris N., Mastro, Michael A..
Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.
:
,
.
Text.
Gaya Turabian
Gallagher, James C., Jacobs, Alan G., Foster, Geoffrey M., Koehler, Andrew D., Anderson, Travis J., Kub, Francis J., Hobart, Karl D., Hite, Jennifer K., Feigelson, Boris N., Mastro, Michael A..
Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation.
:
,
.
Print.