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High Absorption Contrast Quantum Confined Stark Effect in Ultra-Thin Ge/SiGe Quantum Well Stacks Grown on Si

We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast Δα/α of 2.1 at 1 Vpp swing in QCSE stacks grown on ultra-thin (100 nm) strain relaxed GeSi buffer layers on 300 mm Si wafers. Such ultra-thin QCSE stacks will enable future integration of highly efficient QCSE electro-absorption modulators with low optical coupling loss to passive Si waveguides in a sub-micron silicon photonics platform.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.56 No.1 February 2020

No. Panggil

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Penerbit

: .,

Deskripsi Fisik

p. 5200207

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

-

Edisi

-

Subjek

OPTICAL INTERCONNECTS
SILICON PHOTONICS
GERMANIUM
STARK EFFECT

Info Detail Spesifik

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Pernyataan Tanggungjawab

Srinivasan Ashwyn Srinivasan, Clement Porret, Ewoud Vissers, Paola Favia, Jeroen De Coster, Hugo Bender, Roger Loo, Dries Van Thourhout, Joris Van Campenhout, Marianna Pantouvaki

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