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Highly-Efficient, Ultra-Compact and Polarization-Insensitive Electro-Absorption Modulator Driven by Hybrid Silicon-Indium Tin Oxide-Based MOS Capacitors

Polarization-insensitive modulation plays a key role to be compatible with the current fiber communication systems and the further high-capacity multiplexing transmissions onchip. Here, we propose a highly-efficient, ultra-compact and polarization-insensitive electro-absorption modulator (EAM), which is driven by the hybrid silicon-indium tin oxide (ITO) based metal-oxide-semiconductor (MOS) capacitors. The hybrid silicon-ITO waveguide is formed by embedding an ITO layer in the silicon waveguide center and depositing a second ITO layer on the waveguide surface, thus the light-matter interaction can be strongly enhanced inside the silicon waveguide based on the epsilon-near-zero (ENZ) effect of ITO rather than the commonly employed outside cladding region. By choosing the optimum ENZ condition of ITO layers at the designated wavelength and optimizing the waveguide dimensions, polarization-insensitive modulation is realized with a high modulation efficiency (ME) of ~3.18 dB/μm (ME discrepancy

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.56 No.1 February 2020

No. Panggil

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Penerbit

: .,

Deskripsi Fisik

p. 5200309

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

-

Edisi

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Subjek

INTEGRATED OPTICAL DEVICES
ELECTRO-ABSORPTION MODULATORS
SILICON HYBRID MODULATORS

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yin Xu, Xin Hu, Yue Dong, Bo Zhang, Yi Ni

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