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GeSn/GaAs Hetero-Structure by Magnetron Sputtering

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of 1.8 × 10 9 Jones achieved at 1450 nm under an applied reverse voltage bias of -0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.56 No.2 April 2020

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 4000305

Bahasa

English

ISBN/ISSN

-

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

PHOTODETECTOR
HETEROSTRUCTURE
GESN
MAGNETRON SPUTTERING

Info Detail Spesifik

-

Pernyataan Tanggungjawab

Li Qian, Jinchao Tong, Fei Suo, Lin Liu, Weijun Fan, Yu Luo, Dao Hua Zhang

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