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Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrared Detector Based on a Single Heterojunction Diode

We propose and demonstrate a new single heterojunction structure for dual-band detection based on typeII InAs/GaSb superlattices grown by metal-organic chemical vapor deposition. The structure simply consists of a p-type midwavelength contact layer, an n-type mid-wavelength absorber and an n-type long-wavelength absorber. At a small reverse bias, the presence of a potential barrier in the valence band between the two adjacent absorbers allows the mid-wavelength channel to work only; at a higher bias where the potential barrier no longer exists, photo-generated holes in the long-wavelength absorber are able to transport through the mid-wavelength absorber and reach the p-contact, making both channels to work. At -0.1 V and 77 K, the mid-wavelength channel exhibited a 50% cut-off wavelength of 3.5 μm, a dark current density of 2.4×10 -9 A/cm 2 , and a peak specific detectivity of 1.4×10 13 cm·Hz 1/2 /W; while at -0.3 V the long-wavelength channel exhibited a 50% cut-off wavelength of 8.0 μm, a dark current density of 5.1×10 -7 A/cm 2 , and a peak specific detectivity of 3.6×10 12 cm·Hz 1/2 /W.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.56 No.2 April 2020

No. Panggil

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Penerbit

: .,

Deskripsi Fisik

p. 4300106

Bahasa

English

ISBN/ISSN

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Klasifikasi

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Tipe Isi

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Tipe Media

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Tipe Pembawa

-

Edisi

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Subjek

INAS/GASB TYPE-II SUPERLATTICES
DUAL-BAND INFRARED DETECTORS
SINGLE HETEROSTRUCTURE
PNN STRUCTURE
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

Info Detail Spesifik

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Pernyataan Tanggungjawab

Xiujun Hao, Yan Teng, Yu Zhao, Qihua Wu, Xin Li, Jiafeng Liu, Ying Chen, He Zhu, Baile Chen, Zhuo Deng, Jian Huang, Yong Huang, Hui Yang

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