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64 Gbps PAM4 Si-Ge Waveguide Avalanche Photodiodes With Excellent Temperature Stability

A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is demonstrated. The breakdown voltage increases ~4.2 mV/°C, bandwidth reduces ~0.09%/°C, and gain-bandwidth product reduces ~0.24%/°C with temperature increased from 30 °C to 90 °C. Additionally, it maintains superior performance with low breakdown voltage of ~10 V, high multiplication gain of >15, high bandwidth of ~24.6 GHz, high gain-bandwidth product of >240 GHz, high internal quantum efficiency of ~100%, and clear eye diagrams with 64 Gbps PAM4 modulation at 90 °C.

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Informasi Detail

Judul Seri

JOURNAL OF LIGHTWAVE TECHNOLOGY; Vol.38 No.17 September 1 2020

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 4857 - 4866

Bahasa

English

ISBN/ISSN

-

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

OPTICAL INTERCONNECTS
SILICON PHOTONICS
AVALANCHE PHOTODIODE

Info Detail Spesifik

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Pernyataan Tanggungjawab

Yuan Yuan, Zhihong Huang, Binhao Wang, Wayne V. Sorin, Xiaoge Zeng, Di Liang, Marco Fiorentino, Joe C. Campbell, Raymond G. Beausoleil

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