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500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator
For 64-Gbaud operation and beyond, we developed a power efficient high-bandwidth coherent driver modulator composed of a linear four-channel ultra-low power CMOS driver IC and an InP-based dual-polarization IQ modulator. The CMOS driver was fabricated in 65-nm CMOS technology and showed power dissipation of
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