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Kumar, Ashish, Lee, Wen Hsi, Wang, Y. L.. (). Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP . : .

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Kumar, Ashish, Lee, Wen Hsi, Wang, Y. L.. Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP. : , . Text.

Gaya MLA

Kumar, Ashish, Lee, Wen Hsi, Wang, Y. L.. Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP. : , . Text.

Gaya Turabian

Kumar, Ashish, Lee, Wen Hsi, Wang, Y. L.. Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP. : , . Print.