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Optimizing the Isotropic Etching Nature and Etch Profile of Si, Ge and Si0.8Ge0.2 by Controlling CF4 Atmosphere With Ar and O2 Additives in ICP

An isotropic etching, etch rate and surface roughness of Si, Ge and Si 0.8 Ge 0.2 subjected to CF 4 /Ar/O 2 plasma has been studied using inductively coupled plasma (ICP) system. First, we applied the etching parameters on the silicon substrate to observe the etching rate using carbon tetrafluoride (CF 4 ) under different flow rates and choose the parameters of high etch rate. The chosen parameters for silicon was CF 4 (60 sccm) and etching in different ratios of argon (Ar) and oxygen (O 2 ) were also discussed. Second, it also reports on selective isotropic etching for germanium (Ge) and Si 0.8 Ge 0.2 by ultrahigh vacuum chemical vapor deposition (UHVCVD) and was etched under selected conditions used for silicon under different atmospheres in an inductively coupled plasma system. Starting from a pure CF 4 gas that etches Ge and Si 0.8 Ge 0.2 with a good selectivity to silicon, the modification of gas mixture was also investigated. A possible mechanism based on the favored action of CF 4 is investigated. Relative etch rate between Si, Ge and Si 0.8 Ge 0.2 are explained with etch rate reductions achieved by selective CF 4 plasma chemistries with Ar/O 2 . Etched profile, surface roughness was examined and measured by using SEM and AFM technique.

Ketersediaan

Informasi Detail

Judul Seri

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING; Vol.34 No.2 May 2021

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 177 - 184

Bahasa

English

ISBN/ISSN

-

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

SILICON
SELECTIVITY
SURFACE ROUGHNESS
SIGE
ISOTROPIC ETCHING
GE
ICP

Info Detail Spesifik

DOI: 10.1109/TSM.2021.3057100

Pernyataan Tanggungjawab

Ashish Kumar, Wen Hsi Lee, Y. L. Wang

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