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Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing

We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.

Ketersediaan

Informasi Detail

Judul Seri

JOURNAL OF LIGHTWAVE TECHNOLOGY; Vol.39 No.10 May 15 2021

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 3341 - 3349

Bahasa

English

ISBN/ISSN

-

Klasifikasi

-

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

UTC-PD
HEMT
FULL COHERENT NETWORK
OPTICAL-TO-WIRELESS CARRIER FREQUENCY DOWNCONVERSI
PHOTONIC DOUBLE-MIXING

Info Detail Spesifik

DOI: 10.1109/JLT.2021.3060795

Pernyataan Tanggungjawab

Akira Satou, Yuya Omori, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji

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