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Impact of Excited States Transitions on Polarization Property of InAs/InP Quantum Dots

Self-assembled InAs/InGaAsP/InP quantum dots (QD) have been investigated intensively, in which polarization property is a key performance indicator in some photonic devices, such as semiconductor QD optical amplifiers. Conventionally, increased transverse magnetic (TM) polarization is achieved by increased heavy-hole (HH) - light-hole (LH) mixing, such as using closely stacked QDs with large stacking layer number (SLN), which was predicted by previous theoretical works and verified experimentally. However, high TM polarization in the closely stacked QDs with small SLNs was not predicted by the current theory but confirmed experimentally. In this work, closely stacked InAs/InGaAsP/InP QDs with small SLNs are investigated including strain, piezoelectricity and spin-orbit interaction. It is found that the high TM polarization in the closely stacked InAs/InP QDs with small SLNs is attributed to strong first excited state transitions and thus more p-type wavefunctions involved, rather than the high HH-LH mixing. With increase of SLN, TM polarization contributed by first excited state transitions decreases, while it contributed by the HH-LH mixing increases.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.1 January 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 7100109

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

SELF-ASSEMBLED QUANTUM DOT
TE/TM POLARIZATION
EXCITED STATES TRANSITION
SMALL STACKING LAYER NUMBER
HEAVY-HOLE AND LIGHT-HOLE MIXING

Info Detail Spesifik

DOI: 10.1109/JQE.2021.3137813

Pernyataan Tanggungjawab

Fujuan Huang, Xiupu Zhang

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