Text
Parametric Optimization for Moisture Infiltration Prevention Into a FOUP (Front Opening Unified Pod)
Contamination control and mitigation is a vital function in the semiconductor manufacturing process, especially with the ever-decreasing feature size of wafers making them more prone and sensitive to contamination. If not properly handled, it could lead to the formation of wafer defects extending to yield reduction and device performance deterioration. Purging the front opening unified pods (FOUP) that carry semiconductor wafers between process steps by the use of diffuser purge and air curtain technology are just two examples of approaches by which contamination could be controlled. With the optimization objective of minimizing both the relative humidity (RH) and total clean dry air (CDA) that would be used by both diffuser-purge and laminar air curtain supply, in this study, the optimum values predicted for the input parameters using the response surface optimization (RSO) tool by Ansys DesignXplorer are as follows: 30 mm air curtain width, 0.3 m/s FFU velocity, 0.3 m/s air curtain velocity and 130.01 l/min flow rate total for the two diffuser-purge. These optimum values of the aforementioned parameters are predicted to maintain the allowable amount of moisture inside the FOUP as specified by the semiconductor industry, while using the least amount of clean dry air.
Barcode | Tipe Koleksi | Nomor Panggil | Lokasi | Status | |
---|---|---|---|---|---|
art141777 | null | Artikel | Gdg9-Lt3 | Tersedia namun tidak untuk dipinjamkan - No Loan |
Tidak tersedia versi lain