Text

High Power Single Mode 1300-nm Superlattice Based VCSEL : Impact of the Buried Tunnel Junction Diameter on Performance

High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular beam epitaõy. The current and optical confinement is provided by a lateral-structured buried tunnel junction with etching depth of $\sim 25$ nm. It is shown that optimal diameter of the buried tunnel junction for high-power single mode emission is $\sim 5$ - $6~\mu \text{m}$ . The VCSEL demonstrates more than 6 mW single mode continuous-wave power and a threshold current less than 1.5 mA at 20 °C. The output optical power exceeds 1 mW at 85 °C. A -3dB modulation bandwidth up to 8 GHz and 6 GHz is obtained at 20 °C and 85 °C, respectively. The gain coefficient of $\sim 650$ cm−1 and the transparency current density of $\sim 630$ A/cm2 are estimated at zero gain-to-cavity detuning (\sim 60 °C). The ultimate low internal optical losses about 0.08 % per round-trip (distributed losses ~3.2 cm−1) at 20 °C and 0.13 % per round-trip (distributed losses ~5.5 cm−1) at 100 °C were obtained.

Ketersediaan

Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.2 April 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 2400115

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

OPTICAL MODULATION
VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS)
WAFER BONDING
SUPERLATTICES

Info Detail Spesifik

DOI: 10.1109/JQE.2022.3141418

Pernyataan Tanggungjawab

Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin ... (et al.)

Versi lain/terkait

Lampiran Berkas

Komentar