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Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters

The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-overlap design is analyzed by using a self-consistent 6-band $k\cdot p$ method. Our study evaluates the optical transition energy, ground state electron-hole wavefunction overlap, and optical gain characteristics of a dilute-As InGaNAs QW consisting of a 3.3 nm thick In0.19Ga0.81N0.94As0.06 well and 10 nm thick GaN barriers. The calculation suggests that the In0.19Ga0.81N0.94As0.06 QW may result in a transition wavelength and optical gain comparable to a conventional 3.3 nm thick In0.35Ga0.65N QW, while preserving low In-content (~19%). In addition, a staggered dilute-As InGaNAs QW design with a modulated As-doping profile in the InGaNAs QW is presented, and the calculation results in a significantly enhanced wavefunction overlap and optical gain. This study reveals the excellent potential of the dilute-As InGaNAs semiconductor for application as a high efficiency active region material for future long wavelength emitters.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.2 April 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 3000106

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

LIGHT-EMITTING DIODES
INGAN
INGANAS
DILUTE-AS
DILUTE-ANION SEMICONDUCTORS
RED EMITTERS

Info Detail Spesifik

DOI: 10.1109/JQE.2022.3143573

Pernyataan Tanggungjawab

Wei Sun, Hanlin Fu, Damir Borovac, Justin C. Goodrich, Chee-Keong Tan, Nelson Tansu

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