Gaya APA
Wan, Songyang, Li, Tao, Gong, Haimei, Li, Xue, Shao, Xiumei, Liu, Yage, Gu, Yi, Deng, Shuangyan, Ma, Yingjie, Liu, Bowen, Wang, Hongzhen. ().
Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing .
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Gaya Chicago
Wan, Songyang, Li, Tao, Gong, Haimei, Li, Xue, Shao, Xiumei, Liu, Yage, Gu, Yi, Deng, Shuangyan, Ma, Yingjie, Liu, Bowen, Wang, Hongzhen.
Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing.
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Text.
Gaya MLA
Wan, Songyang, Li, Tao, Gong, Haimei, Li, Xue, Shao, Xiumei, Liu, Yage, Gu, Yi, Deng, Shuangyan, Ma, Yingjie, Liu, Bowen, Wang, Hongzhen.
Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing.
:
,
.
Text.
Gaya Turabian
Wan, Songyang, Li, Tao, Gong, Haimei, Li, Xue, Shao, Xiumei, Liu, Yage, Gu, Yi, Deng, Shuangyan, Ma, Yingjie, Liu, Bowen, Wang, Hongzhen.
Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing.
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