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Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing

Ex-situ rapid thermal treatments of 1–2.5 μm extended wavelength In 0.83 Ga 0.17 As/In 0.83 Al 0.17 As photodetector epiwafers on InP substrate were investigated. Enhanced photoluminescence intensities, narrower and stronger x-ray diffraction peaks, and decreased dislocation defect densities were observed with the increase of the rapid annealing temperature from 650°C to 750°C. Monotonically decreased dark current, dark noise and climbed peak detectivity for the photodetectors were attained. The cut-off wavelength remain unchanged after thermal treatments. The crystal lattice was irreversibly damaged and the device failed once the temperature was risens to 800°C. These results indicate that the ex-situ thermal treatment can serve as an effectively route to improve the qualities of metamorphic In x Ga 1−x As materials as well as devices.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.3 June 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 4000107

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

DARK CURRENT
METAMORPHIC
EX-SITU THERMAL TREATMENT
INGAAS PHOTODETECTORS
DISLOCATION

Info Detail Spesifik

DOI: 10.1109/JQE.2022.3150394

Pernyataan Tanggungjawab

Songyang Wan, Yingjie Ma, Yage Liu, Hongzhen Wang, Shuangyan Deng, Yi Gu, Bowen Liu, Tao Li, Xiumei Shao, Xue Li, Haimei Gong

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