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A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs 0.52 Sb 0.48 (GaAsSb) absorption region and an Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 μm at room temperature and a responsivity of 0.39 A/W at 1.55 μm wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.31±0.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.

Ketersediaan

Informasi Detail

Judul Seri

JOURNAL OF LIGHTWAVE TECHNOLOGY; Vol.40 No.14 July 15 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 4709-4713

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

AVALANCHE BREAKDOWN
AVALANCHE PHOTODIODE (APD)
TEMPERATURE COEFFICIENT
IMPACT IONIZATION
GAASSB
ALGAASSB

Info Detail Spesifik

DOI: 10.1109/JLT.2022.3167268

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Ye Cao, Tarick Osman, Edmund Clarke, Pallavi Kisan Patil, Jo Shien Ng, Chee Hing Tan

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