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High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors

In this paper, a vertical stacked near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band detector based on InGaAs and In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 type-II superlattice (T2SL) is presented. A barrier layer of AlAs 0.56 Sb 0.44 allows the independent working of the two sub-detectors. The InGaAs NIR sub-detector operates under positive bias, while the eSWIR band detector operates under reverse bias. The NIR sub-detector shows a dark current density of 7.35 × 10 −5 A/cm 2 under the bias of 0.1 V, the responsivity of 0.88 A/W, and a specific detectivity of 4.69 × 10 11 cm· Hz 1/2 /W at 1510 nm. Meanwhile, the dark current density of eSWIR sub-detector is 8.68 × 10 −4 A/cm 2 under −0.4 V with the corresponding responsivity of 0.21 A/W, and a specific detectivity of 1.85×10 10 cm·Hz 1/2 /W at 2 μm. Furthermore, a single-pixel imaging system is built to demonstrate the capability of dual-band detectors in information capturing and target recognition.

Ketersediaan

Informasi Detail

Judul Seri

JOURNAL OF LIGHTWAVE TECHNOLOGY; Vol.40 No.15 August 1 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 5157-5162

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

DUAL-BAND
IN0.53GA0.47AS PIN
IN0.53GA0.47AS/GAAS0.5 SB0.5 T2SL
NIR /ESWIR PHOTODETECTOR
SINGLE PIXEL IMAGING

Info Detail Spesifik

DOI: 10.1109/JLT.2022.3171224

Pernyataan Tanggungjawab

Zongti Wang, Jian Huang, Liqi Zhu, Zhiqi Zhou, Xuyi Zhao, Antian Du, Wenfu Yu, Ruotao Liu, Qian Gong, Baile Chen

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