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Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator

To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a favorable option due to the unique defect engineering and resultant bufferless structure. Among the intensively investigated selective epitaxy methods, lateral aspect ratio trapping generates III-V devices in the same plane as the Si layer enabling efficient coupling with Si waveguides. Here, we demonstrate telecom InGaAs/InP quantum well lasers selectively grown on commercial silicon-on-insulator substrates with an in-plane structure using a simple structural design and growth scheme without any regrowth steps. Leveraging on the lateral aspect ratio trapping technique, uniform quantum wells with high crystalline quality were obtained and shown by comprehensive material characterizations. Room temperature pulsed lasing was achieved on the fabricated micro-ring lasers with a low threshold of 20 μJ/cm 2 . The results present a crucial step towards electrically pumped lasers at telecom band as well as fully integrated Si-photonics.

Ketersediaan

Informasi Detail

Judul Seri

JOURNAL OF LIGHTWAVE TECHNOLOGY; Vol.40 No.16 August 15 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 5631-5635

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

OPTICAL COMMUNICATION
QUANTUM WELL LASERS
EPITAXIAL GROWTH

Info Detail Spesifik

DOI: 10.1109/JLT.2022.3181723

Pernyataan Tanggungjawab

Jie Li, Ying Xue, Liying Lin, Zengshan Xing, Kam Sing Wong, Kei May Lau

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