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Harmonic Generation in GaP/Si and GaP/AlP Superlattice-Based Waveguides
We present a theoretical investigation, based on the tight-binding Hamiltonian, of efficient second harmonic generation (SHG) in the lattice-matched N-doped (GaP)N/(Si2)M short-period superlattice integrated in a strip waveguide in the silicon-on-insulator platform. The χ(2)zzz spectrum has been simulated as a function of the number of the monolayers for the “non-relaxed” heterointerfaces. For TM pumps at 5.05 μm a χ(2)zzz value of 1.25×10 4 pm/V has been calculated for the (GaP)1/(Si2)2 superlattice giving a maximum conversion efficiency around 1.14%/W, where the waveguide coherence length was 3.37 μm and the waveguide width was 2 μm. Moreover the (GaP)3/(AlP)3 superlattice is proposed for SHG with surface incidence, operating in the mid infrared with χ(2)zzz value of 1.8×10 4 pm/V. Finally, the χ(2)zzz spectrum for difference frequency generation is reported for (GaP)5/(Si2)1 and (GaP)4/(Si2)2 .
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