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Perspectives on the Development of Metalorganic Vapor Phase Epitaxy for III-V Optoelectronic Devices

The mainstream production of optoelectronic and electronic devices based on epitaxial III-V compound semiconductor materials largely employs metalorganic vapor phase epitaxy, a process first demonstrated for devices in the 1970’s. For this special issue in honor of Prof. P. Daniel Dapkus, this paper first briefly reviews his early contributions that spearheaded the interest of MOVPE as a III-V device epitaxy process. Next, the paper discusses MOVPE reactor development in the 1980’s, which at the time was one of the key challenges in establishing MOVPE technology as a reliable epitaxy manufacturing process. The approach combined physical modeling and numerical simulations of reactor processes followed by materials and device demonstrations. Highly uniform performance metrics of AlGaAs/AlGaAs quantum-well diode lasers and two-dimensional monolithic surface-emitting lasers were demonstrated with excellent run-to-run reproducibility. This foundational approach advanced efforts to standardize reactors and subsequent scaling for high-throughput production.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.4 August 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 5000111

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

SEMICONDUCTOR DEVICES
III-V SEMICONDUCTOR MATERIALS
QUANTUM-WELL LASERS
EPITAXIAL LAYERS

Info Detail Spesifik

DOI: 10.1109/JQE.2022.3159865

Pernyataan Tanggungjawab

Christine A. Wang

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