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Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM

Nitride based light emitting diodes (LEDs) have demonstrated very high efficiency in the blue and green wavelength ranges. For full color LED based displays, efficient and small sized devices emitting in the three primary colors - red, green and blue are required. While phosphide based red LEDs are highly efficient, high surface recombination velocities limit their scaling to small dimensions. Nitride emitters can be scaled to smaller sizes, however for longer emission wavelength such as yellow, orange, and red, the indium content in the active region of the devices needs to be >30%. Due to the large lattice mismatch between GaN and InN, the needed high indium content introduces a large strain in the structure, often resulting in poor material quality. Recently, a novel technique to mitigate this lattice mismatch induced strain was demonstrated with the use of compliant porous GaN underlayer based substrates. In our previous reports, we have discussed the surface morphology, strain state evolution and device demonstrations using these substrates, however a detailed discussion regarding the pore cross-sections and dislocation propagation for each generation of these porous GaN substrates was yet to be reported. In this work, we will discuss the cross-sectional transmission electron microscopy (TEM) results of these substrates across multiple stages of the substrate technology development.

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Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.58 No.4 August 2022

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 7000307

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

GALLIUM NITRIDE
EPITAXIAL LAYERS
LIGHT SOURCES
TRANSMISSION ELECTRON MICROSCOPY
NANOPOROUS MATERIALS

Info Detail Spesifik

DOI: 10.1109/JQE.2022.3159853

Pernyataan Tanggungjawab

Shubhra S. Pasayat, Feng Wu, Chirag Gupta, Steven P. DenBaars, Shuji Nakamura, Stacia Keller, Umesh K. Mishra

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