Text

Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters Using Al-Content Engineered Superlattice Electron Blocking Layer

In this study, we investigate a unique Al-content engineered superlattice electron blocking layer (AESL-EBL) for improving the charge carrier transport properties of AlGaN quantum well (QW) deep ultraviolet (DUV) light-emitting diode (LED) structures. LED structures without EBL, with conventional bulk EBL (BEBL), and superlattice EBL (SL-EBL) are used for comparison. It is found that the LED structure with the AESL-EBL can exhibit superior electron blocking and hole injection, leading to reduced efficiency droop and improved light output power, compared to LED structures without EBL and with BEBL. Notably, the LED structure with AESL-EBL also outperforms the LED structure with SL-EBL, benefitting from the Al-content engineered SL. In the end, such an ASEL-EBL is applied to a DUV laser diode structure, and by optimizing the device structure low Mg-induced internal loss of around 1 cm−1 can be obtained.

Ketersediaan

Informasi Detail

Judul Seri

IEEE JOURNAL OF QUANTUM ELECTRONICS; Vol.59 No.1 February 2023

No. Panggil

-

Penerbit

: .,

Deskripsi Fisik

p. 3300106

Bahasa

English

ISBN/ISSN

-

Klasifikasi

NONE

Tipe Isi

-

Tipe Media

-

Tipe Pembawa

-

Edisi

-

Subjek

ALGAN
SUPERLATTICE
ELECTRON BLOCKING LAYER
HOLE INJECTION
HOT HOLE
OPTICAL CONFINEMENT

Info Detail Spesifik

DOI: 10.1109/JQE.2023.3234991

Pernyataan Tanggungjawab

Xue Yin, Songrui Zhao

Versi lain/terkait

Lampiran Berkas

Komentar