Dislocation Evolvement in Metamorphic In0.83Ga0.17As/InP Photodetectors Throu…
Ex-situ rapid thermal treatments of 1–2.5 μm extended wavelength In 0.83 Ga 0.17 As/In 0.83 Al 0.17 As photodetector epiwafers on InP substrate were investigated. Enhanced photoluminescence inte…
Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Foca…
By incorporating of a combined mesa cleaning of SF 6 plasma bombarding and HCl rinsing prior to the SiN x passivation, an ultra-low dark current density of 9.1 nA/cm 2 at 180 K under a reverse bias…
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